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Band curvature, effect

Number of Equivalent Band Curvature Effective Masses Anisotropy Measured (Light)... [Pg.2050]

Band Curvature Effective Mass Longitudinal Transverse... [Pg.2050]

Band Curvature Effective Mass (expressed as fraction of free electron mass)... [Pg.216]

Semiconductors with Multiple Valence Band Maxima Band Curvature Effective Masses Measured (Bght)... [Pg.216]

GaAs 1.35 InP 1.27 InAs 0.36 InSb 0.165 CdTe 1.44 Energy Substance Gap 0.067 8500 3 (or 6 ) equivalent [100] valleys 0.36 eV above this maximum with a mobility of 50 0.067 5000 3 (or 6 ) equivalent [100] valleys 0.4 eV above this minimum 0.022 33,000 Equivalent valleys 1.0 eV above this minimum 0.014 78,000 0.11 1000 4 (or 8 ) equivalent [111] valleys 0.51 eV above this minimum Multivalley Semiconductors Band Curvature Effective Mass Number of Equivalent Longitudinal Transverse Anisotropy Valleys and Direction nii mj K = mi/ mj ... [Pg.217]

Number of equivalent Band curvature effective masses Anistrophy Measured (light... [Pg.1880]

Number of equivalent Band curvature effective masses Anistrophy Measured (light) hole Substance valleys and direction Longitudinal Transverse K = mjm mobility (cm /V-s)... [Pg.2251]

See other pages where Band curvature, effect is mentioned: [Pg.2057]    [Pg.2057]    [Pg.2003]    [Pg.2003]    [Pg.2223]    [Pg.2223]    [Pg.2223]    [Pg.360]    [Pg.1880]    [Pg.1880]    [Pg.2178]    [Pg.2000]    [Pg.2000]   
See also in sourсe #XX -- [ Pg.257 , Pg.258 ]

See also in sourсe #XX -- [ Pg.257 , Pg.258 ]



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Curvatures

Effective curvature

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