ArF resist material chemistry

The acrylate platform is characterized by the presence of pendant aliphatic and alicyclic units with acid labile groups on an acrylate backbone. These resist polymers have high transparency at 193 nm, excellent adhesion properties, and high 

Okoroanyanwu, Materials and process issues delaying the Introduction of ArF lithography into production (Part 1), Future Fab Int. 12 (2002) U. Okoroanyanwu, Materials and process issues delaying the introduction of ArF lithography into production (Part 2), Future Fab. Int. 13 (2002). 

Okoroanyanwu, H.J. Levinson, A.M. Goethals, and F. Van Roey, Progress in 193 nm photo resists and related process technologies, in OMMInterface 98 Proc., 1 (1998). 

The backbone of the CO polymer platform is alicyclic units with pendant ester-protecting groups, acidic groups, and adhesion-promoting groups. Resist polymers of this platform generally have higher plasma etch stability, but are also more hydrophobic than their acrylate and COMA counterparts. 

The backbone of the COMA polymer platform comprises cycloolefins with acid labile groups and maleic anhydride. These resists have generally good etch resistance, high mechanical stability, and good resolution, but only moderate transparency. Both CO and COMA platform resists are less susceptible to pattern collapse and show less line width slimming during SEM inspection than their acrylate counterparts. 

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