Applications of Bottom Antireflection Coatings

Almost every single-layer resist system designed for DUV 248-nm (KrF) and DUV 193-nm (ArF lithography) needs some kind of antireflection coating to mitigate 

Okoroanyanwu, HJ. Levinson, A.M. Goethals, and F. Van Roey, Progress in 193 nm photo resists and related process technologies, in OMMInterface 98 Proc., 1 (1998). 

The swing contrast of the thin-film interference effects in photoresists at 

193 nm is almost the same as that at 248 nm, which suggests that the influence of thin-film interference effects in photoresists on line width control in both lithographic regimes are similar. Two promising inorganic antireflection coatings that have been reported in the literature are based on SiO cNy and SiO N .  

Hansen, R. Hurditch, and D. Brzowy, Photoresist surface induction and its effect on swing behavior, Proc. SPIE 1925, 626 (1985). 

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