Application of Diffusion Length Measurements in a-Si

One other example will suffice. By fitting experimental / versus 1/a data on a given sample to Eq. (7) at low and high bias light, it is possible to extract both Ld and the space-charge width at low light. This can be done rapidly by a computer fit. As already mentioned, for a single type of recombination center we expect Lq In the ordinary Schottky-barrier formula the 

The diffusion length as a measure of fir in undoped a-Si H is a useful parameter to predict the performance of materials made by different methods. The surface photovoltage method has proven to be a rapid and reliable method of determining the diffusion length, provided provision is made to apply bias light to the sample to the level of one sun. This collapses 

(1963). Concepts in Photoconductivity and Allied Problems. Wiley (Interscience), New York. 

Rothwarf, A., and Boer, K. W. (1975). Prog. Solid State Chem 10, Part 2,84. 

(1959). Semiconductors, p. 25. Cambridge Univ. Press, London and New York. Staebler, D. (1980). J. Non-Crys. Solids 35/36,387. 

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