Antiphase boundaries structural effects

The atomic mechanism, based on the previously proposed inhomogeneous shear, leading to the formation of twinning and antiphase boundaries in TiNi with the CsCl-type structure is described. The twinning mechanism described herein explains the electrical resistivity anomaly due to incomplete thermal cyclings observed previously in TiNi. This explanation is in keeping, in a qualitative manner, with the "memory effects observed in relation to the electrical resistivity anomaly. 

The limited number of high quality substrates suitable for oxide epitaxy, together with the wide range of structural properties exhibited by oxides, may require the use of a substrate with a different crystal symmetry than the film material. If the crystal symmetries are sufficiently different, antiphase boundaries (ABPs) may result during nucleation of the initial monolayers. Such APBs tend to be very stable and thus typically become permanently ingrained in the film structure. The question we address here is the effect that APBs in the bulk of the film have on the surface structure. 

The Portevin-Le Chatelier effect with serrated yielding was observed for both the ordered and disordered state (Mohamed etal., 1974). Recovery and recrystallization have been analyzed in detail (Vidoz etal., 1963 Cahn, 1990, 1991). Experimental and theoretical studies have been directed at dislocations and antiphase domain boundaries (see, e.g. Tichelaar and Schapink, 1991 D. G. Morris, 1992 Veyssiere, 1992), grain boundaries (Yan etal., 1992), and the electronic structure (Bose et al., 1991). It is noted that disordered layers are formed in ordered CujAu on antiphase boundaries and twin boundaries just below the order-disorder transition temperature (Tichelaar et al., 1992). This may be expected in other phases, too, and may improve the ductility of less ductile phases, as is discussed for NijAl (see Sec. 4.1.2). 

---