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And bulk conditions

In heat-exchanger applications, it is frequently important to match heat-transfer requirements with pressure-drop limitations. Assuming a fixed total heat-transfer requirement and a fixed temperature difference between wall and bulk conditions as well as a fixed pressure drop through the tube, derive expressions for the length and diameter of the tube, assuming turbulent flow of a gas with the Prandtl number near unity. [Pg.268]

Equation (10-30) is not applicable for the y values, because and are determined by both reactions 1 and 2 that is, Eq. (10-27) is not valid. However, 7i and yj may be formulated directly by taking ratios of the rates at surface and bulk conditions ... [Pg.379]

Surface and Bulk Conditions During Particle Dissolution with no Reaction... [Pg.206]

FIGURE 5.13 Reaction rate at the surface and bulk conditions for reaction (2). [Pg.98]

The component net reaction rates are shown in Figure 5.19-5.23 at the catalyst surface and bulk conditions. The oXylene net rate of reaction is the sum of three reaction rates 1, 2, and 3. Figure 5.20 shows the negative reaction net consumption rate of o-tolualdehyde which indicates that the rate of formation is higher than the rate of consumption so that o-tolualdehyde will accumulate and the mole fraction will increase at the catalyst surface. The o-Xylene and phthalic anhydride effectiveness factors are as shown in Figure 5.18 and the o-tolualdehyde effectiveness factor shows a sharp decrease which takes values less than one. Some of the effectiveness factors for the components show maximum values with increasing bulk temperature. [Pg.351]

In the initial and bulk conditions we assume that only species A and Y are initially present in solution at the concentrations and Cy, respectively ... [Pg.124]

As in Section III-2A, it is convenient to suppose the two bulk phases, a and /3, to be uniform up to an arbitrary dividing plane S, as illustrated in Fig. Ill-10. We restrict ourselves to plane surfaces so that C and C2 are zero, and the condition of equilibrium does not impose any particular location for S. As before, one computes the various extensive quantities on this basis and compares them with the values for the system as a whole. Any excess or deficiency is then attributed to the surface region. [Pg.71]

Vlayl fluoride undergoes free-radical polymerization. The first polymerization iavolved heating a saturated solutioa of VF ia tolueae at 67°C uader 600 MPa (87,000 psi) for 16 h (24). A wide variety of ioitiators and polymerization conditions have been explored (25—27). Examples of bulk (28,29) and solution (25,28,30,31) polymerizations exist however, aqueous suspension or emulsion methods are generally preferred (26,32—40). VF volatiflty dictates that moderately high pressures be used. Photopolymerizations, usually incorporating free-radical initiators, are also known (26,28,29,35). [Pg.379]

The vast majority of commercial apphcations of methacryhc acid and its esters stem from their facile free-radical polymerizabiUty (see Initiators, FREE-RADICAl). Solution, suspension, emulsion, and bulk polymerizations have been used to advantage. Although of much less commercial importance, anionic polymerizations of methacrylates have also been extensively studied. Strictiy anhydrous reaction conditions at low temperatures are required to yield high molecular weight polymers in anionic polymerization. Side reactions of the propagating anion at the ester carbonyl are difficult to avoid and lead to polymer branching and inactivation (38—44). [Pg.247]

Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the... Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...
Determination of the Gas-Phase Temperature. The development given above is in terms of interface conditions, bulk Hquid temperature, and bulk gas enthalpy. Often the temperature of the vapor phase is important to the designer, either as one of the variables specified or as an important indicator of fogging conditions in the column. Such a condition would occur if the gas temperature equaled the saturation temperature, that is, the interface temperature. When fogging does occur, the column can no longer be expected to operate according to the relations presented herein but is basically out of control. [Pg.102]

Fig. 15. Polymerization rate vs molecular weight relationship for spontaneous bulk styrene polymerization under neutral and acidic conditions. Fig. 15. Polymerization rate vs molecular weight relationship for spontaneous bulk styrene polymerization under neutral and acidic conditions.
Because of its hygroscopicity, fmctose must be properly dried, packaged, and stored to prevent lumping and preserve free-flowing handling. Recommended storage and bulk handling conditions call for conditioned air at a relative humidity of less than 50% and a maximum temperature of 24°C... [Pg.45]


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See also in sourсe #XX -- [ Pg.206 ]




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