Amorphous peak position

Table I. Amorphous peak positions (as equivalent Bragg spacings, d) for the methacrylate and styrene polymers of Figs. 7-9 and 14. 

For the spectra of Ni, peaks corresponding to Ni oxide and Ni metal are observed in the as-prepared sample [28-30]. After the etching with Ar, however, the peak of Ni metal is predominant. This implies that the state of Ni in the Ni-Zn nanoclusters is metallic, although their surface was oxidized under the atmospheric conditions. On the other hand, the identification of Zn state is difficult because the peak positions of Zn and ZnO in ESCA spectra are very close to each other. Furthermore, the B/Ni ratio determined by ESCA was increased with increasing Zn added e.g., Ni B = 73.3 26.7 and 60.6 39.4 for Zn/Ni = 0.0 and 1.0, respectively. Because no crystalline structure was found except for Ti02 from both electron and X-ray diffraction patterns of the respective samples, it can be concluded that formed nanoclusters were amorphous. Ni-Zn nanoclusters would be composed of amorphous intermetallic compounds through the... 

This picture was found to be consistent with the comparison of Raman spectra and optical gap of a-C H films deposited by RFPECVD, with increasing self-bias [41], It was found that both, the band intensity ratio /d//g and the peak position (DQ increased upon increasing self-bias potential. At the same time, a decrease on the optical gap was observed. Within the cluster model for the electronic structure of amorphous carbon films, a decrease in the optical gap is expected for the increase of the sp -carbon clusters size. From this, one can admit that in a-C H films, the modifications mentioned earlier in the Raman spectra really correspond to an increase in the graphitic clusters size. 

When the evolution spectra is measured during illumination for deuter-ated fluorinated amorphous silicon, the deuterium evolution rate peaks are shifted to lower temperatures compared to measurements in the dark (Weil et al., 1988). Both the low temperature and high temperature peak positions shift = 20-30°C during illumination with 100mW/cm2 heat-... 

Molecular Weight Dependence of Phase Structure. Similar line shape analysis was performed for samples with molecular weight over a very wide range that had been crystallized from the melt. In some samples, an additional crystalline line appears at 34.4 ppm which can be assigned to trans-trans methylene sequences in a monoclinic crystal form. Therefore the spectrum was analyzed in terms of four Lorentzian functions with different peak positions and line widths i.e. for two crystalline and two noncrystalline lines. Reasonable curve fitting was also obtained in these cases. The results are plotted by solid circles on the data of the broad-line H NMR in Fig. 3. The mass fractions of the crystalline, amorphous phases and the crystalline-amorphous interphase are in good accord with those of the broad, narrow, and intermediate components from the broad-line NMR analysis. 

Figure 4. Normalized, kl-weighted As-EXAFS spectra (a) and uncorrected Fourier transforms (FTs) (b) of scorodite (a crystalline ferric arsenate), an x-ray amorphous analog, and As(V) sorbed to amorphous hydrous ferric oxide (HFO), The EXAFS spectra can clearly be used to distinguish the coordination environment of arsenic in each of the materials. The highly symmetric local environment of arsenic in scorodite is shown in (c) each arsenic is surrounded by 4 Fe neighbors at a distance of 3.34 A. (see Table 2 for details of precipitate fits, and Table 3 for details of sorption sample fit). Reprinted from Foster (1999). The arrow highlights the region of particular difference among the three spectra. Peak positions in FTs are not corrected for phase-shift effects, and are therefore approximately 0.5 A shorter than the true distance.

Fig. 11.28, CP/MAS NMR spectra of isotactic poly(l-butene). (a) Form I at 20 C (b) Form II at -60°C (c) Form III at -10°C and (d) amorphous at 43°C. The vertical dashed lines represent the peak positions of Form I.

The as implanted figure (Figure 41.11 A) shows the depth to which the Si has been amorphized and the after heat treatment figure (Figure 41.1 IB) shows the defects observed at the peak position of the implant and at the interface between amorphized and damaged Si. 

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