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Aluminum Fermi surface

The Fermi surface of aluminum. The posilioii of the Brillouin Zones has been shifted in the third and fourth bands, in analogy with the dashed-line square sliown in F ig. 16-7. [Pg.372]

A (110) section of the Fermi surface of aluminum in the extended zone scheme, showing the distortion at the Bragg planes. [After Harrison, 1966a.]... [Pg.373]

The rounding off of the Fermi surface in the periodic-zone scheme also corresponds to a distortion of the free-electron sphere in the extended-zone scheme. That distortion, calculated for aluminum, is shown in F ig. 16-9. It has the effect of reducing the total area of free surface and, as we shall sec, in the case of covalent solids the same effect eliminates the entire surface. [Pg.373]

V central cross-section of the Fermi sphere for aluminum in the extended-zone scheme was shown in Fig. 16-9. By a study such as that illustrated in Fig. 16-5, you can identify two orbit types, which correspond to cross-sections of the surfaces for the second and third hands, shown in Fig. 16-8. The topology of the Fermi surface is the same for lead but, with four electrons per atom in lead, the sphere is larger in comparison to the zone than that for aluminum. Estimate the area of cross-sections of the surfaces for the second and third bands for lead, in units of [Injaf, with o the cube edge. [Pg.509]

R. Stedman and G. Nilsson, Observations on the Fermi surface of aluminum by neutron spectrometry, Phys. Rev. Letters 15, 634-37 (1965). [Pg.112]

Coulomb blockade effects have been observed in a tunnel diode architectme consisting of an aluminum electrode covered by a six-layer LB film of eicosanoic acid, a layer of 3.8-nm CdSe nanoparticles capped with hexanethiol, and a gold electrode [166]. The LB film serves as a tunneling barrier between aluminum and the conduction band of the CdSe particles. The conductance versus applied voltage showed an onset of current flow near 0.7 V. The curve shows some small peaks as the current first rises that were attributed to surface states. The data could be fit using a tunneling model integrated between the bottom of the conduction band of the particles and the Fermi level of the aluminum electrode. [Pg.89]

An early systematic experimental study on the imaging mechanism was conducted on Al(lll) (Wintterlin et al., 1989). The observed corrugation amplitude was more than one order of magnitude larger than the Fermi-level LDOS corrugation. Aluminum is a textbook example of simple metals. The electronic states on the AI(lll) surface have been studied thoroughly. [Pg.32]

Lopez et al. [160] applied the technique of Fermi level shift monitoring to characterize the add base properties of passive films on aluminum. The decreasing trend of relative basicity was found to be boehmite > thermal oxide > NaOH-degreased surface > silicate containing detergent-degreased surface > phosphoric add anodic film. The... [Pg.134]


See other pages where Aluminum Fermi surface is mentioned: [Pg.361]    [Pg.499]    [Pg.384]    [Pg.205]    [Pg.220]    [Pg.134]    [Pg.51]    [Pg.109]    [Pg.97]    [Pg.423]    [Pg.219]    [Pg.412]    [Pg.186]    [Pg.162]    [Pg.188]    [Pg.137]    [Pg.921]    [Pg.254]    [Pg.556]    [Pg.134]    [Pg.127]   
See also in sourсe #XX -- [ Pg.372 , Pg.373 ]

See also in sourсe #XX -- [ Pg.372 , Pg.373 ]




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Aluminum surfaces

Surface Fermi

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