Aluminium nitride AIN

The carbides and nitrides are well known for their hardness and strength, and this section will briefly compare a number of these properties with those of the pure metals. Concentration will be placed here on the first row compounds, since these constitute a complete series, and Mo and W, since these are the most commonly studied metals. As will be shown, the physical and mechanical properties of carbides and nitrides resemble those of ceramics not those of metals. Comparisons will be made with boron carbide (B4C), silicon carbide (SiC), aluminium nitride (AIN), silicon nitride (Si3N4), aluminium oxide (A1203), and diamond, as representative ceramic materials. 

Hossain et al [15] measured die cathodoluminescence in undoped aluminium nitride (AIN) thin films at 300, 77 and 4.2 K. These films were grown on sapphire and SiC substrates by LP-MOCVD at 1473 K. As shown in FIGURE 1, two distinct peaks were observed at about 6.1 and 5.9 eV, respectively. The energy position of these peaks increases and the linewidth becomes narrower, as the temperature is decreased. They believed that these two peaks are due to exciton recombination. Recently, MacMillan et al measured cathodoluminescence in AlN-GaN superlattices [16],... 

TABLE 2 Thermochemical Data of Selected Chemical Compounds Aluminium Nitride (AIN), crystal, mol. wt. = 40.98824... 

Aluminium nitride (AIN) has a wurtzite-type stmcture composed of AIN4 units in a hexagonal lattice. Its Al spectrum consists of a single resonance at 114 ppm (Dupree et al. 

One process actually in use is the Serpek Process,1 in which aluminium nitride, AIN, is used. 

The resulting aluminium nitride, AIN, is next decomposed by caustic soda to form ammonia and sodium alurrrinate —... 

A number of nonmetallic materials are called high thermal conductivity materials. The most notable of these is diamond, with a thermal conductivity of 2000 Wm K. All of the others have a dia-mond-Uke stracture, and include boron nitride, BN, and aluminium nitride, AIN (Table 15.2). 

Ti2AlN synthesized by the reaction between the mixture of elements did not show positive results. The dominant phases were titanium nitride (TiN) and hexagonal aluminium nitride AIN. Some amount of non-reacted intermetallic phases were also found in the product... 

Aluminium nitride AIN I ci P6imc hex Wurtzite At nmnal pressure Fig. 4.1-3... 

Aluminium nitride AIN perpend 4.35x10 300 K Powder X-ray difEraction... 

Band Structures of Aluminium Compounds. Aluminium Nitride (AIN). Aluminium nitride is a direct-gap semiconductor. Since it crystallizes in the wurtzite structure, the band structure (Fig. 4.1-66) differs from that of most of the other III-V compounds. 

Electronic Transport, General Description. Aluminium Nitride (AIN). Owing to the large energy gap, transport is always extrinsic. Typical numerical values for the electrical conductivity of undoped single crystals lie in the range 10 cm < cr< 10- f2-lcm-l. 

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