AlSb film deposition

Fig. 46. Powder X-ray diffraction study of AlSb films deposited at different temperatures.

Stibinoalanes, 262-264, 266-268, 269 for AlSb film deposition, 301-303 see also Alane stibine adducts Stibinogallanes, 261-262, 269-272, 294-295 in film deposition, 303 Stibinoindanes, 261-262, 264, 272, 273 in film deposition, 303-304 Structure... 

B. Deposition of AlSb Films by Use of Single Source Precursors. 301... 

The crystallinity of as-deposited AlSb films steadily increases with increasing deposition temperature. Below 375 °C no crystalline material was present according to X-ray diffraction studies (Fig. 46). 

The optimum deposition temperatures for AlSb films were found to range from 375 to 425 °C. Films obtained within this temperature range showed Al Sb ratios close to 1.0, whereas at higher temperatures Al Sb ratios up to 1.28 (500 °C) were detected. In addition, at temperatures above 425 °C large amounts of Si were incorporated into the film material (up to... 

SEM studies of as-deposited AlSb films revealed the formation of smooth films. No island growth was detected. In addition, the presence of both single and agglomerated crystallites with particle sizes ranging from 300 to 700 nm as is illustrated in Fig. 47 was confirmed. The size distribution was found to be almost independent of the deposition temperature. 

In the case of these compounds, dissociation into components is the rule. Nevertheless, using flash evaporation for example AlSb [307, 308] GaAs [309] and InSb [310] or specific recombination as with the so-called three-temperature method [311], e.g. (InSb, InAs, GaAs and also the compounds 2 and CdSe [312, 313], a stoichiometric film deposition can also be achieved. Moreover, three-component films, such as GaAsxP].x can be produced in this way [314]. With the three temperature method, the single components of a compound are separately evaporated each from one source. The concentration of each component in the vapour phase is adjusted via the relevant source temperature. With a suitable substrate temperature, condensation and stoichiometric compound formation can now be achieved, for example in such a way that the Sb atoms which do not react with the In atoms to InSb on the substrate surface are re-emitted into the vapour phase. 

CVD Deposition of Binary AlSb and GaSb Material Films -a Single-Source Approach... 

The forth chapter by S. Schulz also deals with single-source precursors and provides a study case on CVD Deposition of Binary AlSb and GaSb Material Films - a Single-Source Approach . The article summarises recent studies on the synthesis of M-Sb compounds and their potential application as precursors in OMCVD processes. General reaction pathways for the synthesis of Lewis-acid-base adducts R3M-ER3 and heterocycles of the type [R2MSbR2 h (M = Al, Ga) are described. The results of deposition studies are discussed. 

Group IB metals have low solubilities in semiconducting materials. These elements must be absent from semiconductors in which pn junctions with low leakage are formed, but diffusion from deposited films of Cu, Ag, and Au occurs in Ge, Si, CdS, InSb, GaAs, AlSb, CdTe, ZnSe, PbSe, and InAs. ... 

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