All-optical modulators

The possibility of 1.5 pm ultrafast all-optical modulator realization based on GaAs/(AlGa)jiOy heterostructures is discussed. The excitation of the samples by 150fs laser pulses leads to about 25 nm shift of the reflection spectrum. The mean decay time for nonlinear reflection in heterostmctures ranges from 1.0 to 2.5 ps. 

T. T. Alkeskjold, J. Lsegsgaard, A. Bjarklev, et al., All-optical modulation in dye-doped nematic liquid crystal photonic bandgap fibers. Opt. Express 12, 5857 (2004). 

In this chapter, we discuss a number of optical and optoelectronic device applications such as hght-emitting diodes (LEDs), photovoltaic and photoconductive devices, field-effect optical modulator devices and all-optical modulator devices made from thiophenes. Following an introduction to the basic operating principles of each device, we will assess progress in the development of each type of device and focus on the underlying semiconductor physics issues. 

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