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AlInN

Contacts to AlInN were examined in [6]. Titanium and aluminium metallisations exhibited ohmic behaviour and their thermal stability was evaluated. InN-based ohmic contacts were examined also by Donovan et al [7], The use of sapphire substrates combined with growth temperatures in the vicinity of 575°C produced acceptable contact resistances in the range of 10"6 Q cm2. [Pg.135]

FIGURE 1 Calculated electron drift mobilities at 300 K in GalnN and AlInN as a function of composition, in the limit of negligible ionised impurity scattering, after [8],... [Pg.136]

Ilegems, M. and Grandjean, N. (2006) Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications. Applied Physics Letters, 88, 051108. [Pg.461]


See other pages where AlInN is mentioned: [Pg.607]    [Pg.86]    [Pg.115]    [Pg.135]    [Pg.135]    [Pg.136]    [Pg.344]    [Pg.491]    [Pg.494]    [Pg.193]    [Pg.87]    [Pg.461]    [Pg.607]    [Pg.86]    [Pg.115]    [Pg.135]    [Pg.135]    [Pg.136]    [Pg.344]    [Pg.491]    [Pg.494]    [Pg.193]    [Pg.87]    [Pg.461]   


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Electrical Transport Properties of GalnN and AlInN

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