AFM studies of film surfaces

In Ref [195], HOD films were synthesized using the three-step process. In the TEM images, there was a location where diamond and Si were in direct contact. 

In Refs. [303-305], the interface structure was also investigated by cross-sectional HRTEM. The diamond films were grown by the three-step process, and the conditions are listed in Table H.3. Consequently, an HOD film was grown in the center of the Si(lOO) substrate. In the carburization step, there was an a-C film of 250-nm thickness on Si, in which p-SiC, diamond, and graphite were embedded. A closer examination indicated that there existed an interlayer of 1.5- to 2-pm thickness between Si and the a-C layer, which was identified as a-SiC [305]. Since the bias voltage is not usually applied uniformly across the Si wafer, the distribution of these materials depended on the location on the Si substrate. Near the edge of the 

5% lattice mismatch results in a tilt of the 111] planes of diamond by 9.5° with respect to Si 111] [195], 

In Ref. [310], an HRTEM study was carried out for an HOD film of less than 1-pm thickness, also made by the two-step process of Ref. [263]. A majority of diamond grains were (100)-oriented, and twins, which started from the interface, were frequently found in the grains. At the interface between diamond and Si, a few 

In Ref. [312], TEM plan views at different depths were observed for an HOD film of 2-pm thickness, and those near the surface were observed for a 25-pm thick HOD film. These results showed that in the HOD film growth, there was a critical thickness that was determined by the growth parameters, the nucleation density, and the density of oriented nuclei. Below the critical thickness, diamond grains contained a high density of dislocations perpendicular to the (100) faces, while above the critical thickness, the dislocation and other defect densities were markedly lower. 

---