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Acoustic phonon scattering

Figure 49. The mobility of the excess electrons in various SnCh samples determined by means of the Hall effect and conductivity. The high temperature behavior points to acoustic phonon scattering. Both samples differ in purity. According to Ref..155. (Reprinted from H. J. van Daal, Polar Optical-Mode Scattering of Electrons in SnC>2. , Solid State Commun. 6, 5-9. Copyright 1968 with permission from Elsevier.)... Figure 49. The mobility of the excess electrons in various SnCh samples determined by means of the Hall effect and conductivity. The high temperature behavior points to acoustic phonon scattering. Both samples differ in purity. According to Ref..155. (Reprinted from H. J. van Daal, Polar Optical-Mode Scattering of Electrons in SnC>2. , Solid State Commun. 6, 5-9. Copyright 1968 with permission from Elsevier.)...
Hot-carrier regime, decay by carrier-carrier scattering leads to energy redistribution (decay of optical phonons and carrier-acoustic phonon scattering), time-scale <1-100 ps... [Pg.544]

Figure 18 Temperature dependence of the electron mobility for 6H-SiC. The broken lines show the calculated values of the mobility determined by the impurity scattering by the piezophonon scattering Itpiez by polar optical phonon scattering (Xp i, and by acoustic phonon scattering The solid hne shows the values for the mobility determined by acoustic phonon and optical phonon scatterings, which is in... Figure 18 Temperature dependence of the electron mobility for 6H-SiC. The broken lines show the calculated values of the mobility determined by the impurity scattering by the piezophonon scattering Itpiez by polar optical phonon scattering (Xp i, and by acoustic phonon scattering The solid hne shows the values for the mobility determined by acoustic phonon and optical phonon scatterings, which is in...
Hole-Optical Phonon Scattering Carrier-Acoustic Phonon Scattering... [Pg.564]

For TMDs, the temperature dependence of the electron mobility is usually formed to be much stronger than expected for acoustic phonon scattering. The resistivity for materials with a temperature independent extrinsic carrier concentration is usually fit by the empirical reladmi ... [Pg.100]

Until now we have mainly treated electrons and holes analogously to the ionic defects. As far as the mobility is concerned, quantum mechanical eflfects cause severe differences. There is no energy of activation (AH = 0) in the case of perfect band conduction and, formally speaking, the temperature dependence of the mobility is effectively determined by the prefactor. The determining process for the finite mobility is scattering by lattice vibrations and/or imperfections. The T / relation for acoustic phonon scattering is a typical law in this context (see Chapter 3) (see Fig. 6.14). Unless the electronic charge concentration has been fixed by dop-... [Pg.292]


See other pages where Acoustic phonon scattering is mentioned: [Pg.205]    [Pg.44]    [Pg.244]    [Pg.247]    [Pg.102]    [Pg.61]    [Pg.62]    [Pg.384]    [Pg.356]    [Pg.357]    [Pg.491]    [Pg.495]    [Pg.514]    [Pg.449]    [Pg.63]    [Pg.535]    [Pg.537]    [Pg.282]    [Pg.202]    [Pg.46]    [Pg.338]    [Pg.463]    [Pg.301]    [Pg.371]    [Pg.459]    [Pg.460]    [Pg.461]    [Pg.145]    [Pg.64]    [Pg.65]   
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