X-ray photoemission experiments

The density of valence states of crystalline Te2.ooBro.75Io.2s was determined 54) by UV and X-ray photoemission experiments and compared with the density of valaice states of elemental tellurium The results are given in Figs. 26a-c. 

Interfaces can also be studied through the use of the electron escape depth in photoemission experiments. The chemistry and formation of interfaces can be observed by growing or depositing material to form the desired interface This requires that the deposition or growth be performed either in-situ or in a vacuum interlocked system to keep extraneous contamination to a minimvim. If the interface is within the electron escape depth variable energy x-ray photoemission experiments can be performed to yield interface chemistry. Later on, these methods applied to the silicon dioxide-silicon interface and metal-III-V interfaces will be discussed in some detail. Because the above methods depend on the electron escape depth phenomenon, they are non-destructiva However, studies can only be made on model systems. 

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