Wire electrochemical transistor

The transistor as a component of the e-textile plays a crucial role in the textile electronic circuit. The existing fibrous transistors can be divided into two categories wire thin film transistors (WTFTs Lee and Subramanian, 2003 Maccioni et al., 2006 Locci et al., 2007) and wire electrochemical transistors (WECTs Hamedi et al., 2007 De Rossi, 2007 Tao et al., 2011). WTFT, also called WFET, is based on the field-effect transistor (FET) technology and WECT is based on electrochemical technology. With the help of these transistors, the textile electronic circuit can be achieved without loss of mechanical properties such as flexibility or softness. 

Oligonucleotides have frequently been used in the eonstruction of nanodevices where they are used as a means of detection, as electrical wires or as a scaffold (see also section on nanodevices in section 3.5). A real-time DNA detection method using ssDNA-modified nanoparticles and micropatterned chemoresponsive diffraction gratings has been reported that allows hybridisation detection of 40-900 femtomoles of surface-bound DNA. ° Carbon nanotubes are widely used for the construction of nanodevices, and DNA-functionalised carbon surfaces and nanotubes have been reported as platforms for electrochemical detection of hybridisation.PNA-modified carbon nanotubes have similarly been used for the detection of hybridisation with DNA. DNA conjugated to carbon and other solid surfaces may additionally be used as molecular wires,and carbon-modified nanotubes have been developed that act as a field-effect transistor. 

Figure 25.18 (a) Schematic of parallel configuration of WECT (b) Photo of twisted WECT. Reproduced with permission from (Tao, X., Koncar, V., Dufour, C., 2011. Geometry pattern for the wire orgaiuc electrochemical textile transistor. Journal of the Electrochemical Society 158, H572—H577), Copyright 2011, The Electrochemical Society. 

Tao, X., Koncar, V., Dufour, C., 2011. Geometry pattern for the wire organic electrochemical textile transistor. Journal of the Electrochemical Society 158, H572—H577. 

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