Vertical MOCVD reactors

D.I. Fotiadis, A.M. Kremer, DP. McKenna, and K.F. Jensen. Complex Flow Phenomena in Vertical MOCVD Reactors Effects on Deposition Uniformity and Interface Abruptness. J. Cryst. Growth, 85 154—164,1987. 

Fig. 3. Schematic of three commonly used types of MOCVD reactors where the arrows indicate gas flow (a) vertical rotating disk where (— represents an inlet to promote a laterally uniform gas flow, (b) planetary rotation, and (c) hori2ontal.

Figure 1 Illustrates two general MOCVD reactor configurations, the horizontal reactor and the axlsymmetrlc vertical reactor. The reactant gas (ASH3, Ga(CH3)3 and Al( 013)3) enters cold and heats up as It fiows toward the substrate where a solid film of AlGaAs Is being deposited. The chemical transformations Involved In the deposition process may occur both In the gas phase and on the surface of the growing film.

Figure 1. Two typical MOCVD reactor configurations (a) horizontal reactor (b) vertical reactor.

Figure 2. Computed grids for four different shapes of a vertical, axlsymmetrlc MOCVD reactor.

FIGURE 4 Schematic diagram of a typical large-scale highspeed vertical rotating-disk MOCVD reactor chamber including a simplified view of gas flow in a vertical RDR. The inlet gas stream contains the precursor flows and the main carrier gas flow. Typically, the Column V and Column III sources are kept separate until a few inches above the heated susceptor. 

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