Vapour deposition cadmium

Ion Vapour Deposition A variant of the process is ion vapour deposition, in which a high negative potential is applied to the workpiece during chemical vapour deposition. The process has been employed on a commercial scale chiefly for depositing aluminium on to steel and titanium in the aerospace industry as an alternative to cadmium plating, which is liable to cause hydrogen embrittlement, especially of high tensile steel components. The aluminium is evaporated from a wire-fed resistance-heated boat . 

Singh HB, Sudha N (1996) OrganoteUurium precursors for metal organic chemical vapour deposition (MOCVD) of mercury cadmium telluride (MCT). Polyhedron 15(5-6), 745-763... 

T. Sprang, A. Seidel, M. Wark, F. Rittnera, and B. Boddenbe, Cadmium Ion Exchange in Zeolite Y by Chemical Vapour Deposition and Reaction. J. Mater. Chem., 1997, 7, 1429-1432. 

The first ALD thin films were deposited in the 1970s using elemental zinc and sulphur, reacting to form ZnS at 250-450 °C [44], Although metals as ALD precursors seems to be the most straightforward method of producing compound thin films, this type of process is limited by the generally low vapour pressure of elemental metals. Therefore only zinc and cadmium have been used as metal sources in ALD processes. However, some metalloids, e.g. selenium and tellurium, can be used as well. 

The device may be formed by depositing alternating layers of cadmium telluride and mercury telluride by vapour phase deposition techniques and interdiffuse the layers, either during growth or subsequently, so as to form a mercury cadmium telluride layer. Reference is made to GB-A-2146663 (The Secretary of State for Defence, GB, 24.04.85) and GB-A-2203757 (Philips Electronic and Associated Industries Limited, GB, 26.10.88). 

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