Vacuum-tunneling microscop

Stoll, E., Baratoff, A., Selloni, A., and Camevali, P. (1984). Current distribution in the scanning vacuum tunneling microscope a free-electron model. J. Phys. C 17, 3073-3086. 

Binnig, G., Rohrer, H. Vacuum tunnel microscope, Helv. Phys. Acta 1982, 55, 726. 

The importance of low pressures has already been stressed as a criterion for surface science studies. However, it is also a limitation because real-world phenomena do not occur in a controlled vacuum. Instead, they occur at atmospheric pressures or higher, often at elevated temperatures, and in conditions of humidity or even contamination. Hence, a major tlmist in surface science has been to modify existmg techniques and equipment to pemiit detailed surface analysis under conditions that are less than ideal. The scamiing tunnelling microscope (STM) is a recent addition to the surface science arsenal and has the capability of providing atomic-scale infomiation at ambient pressures and elevated temperatures. Incredible insight into the nature of surface reactions has been achieved by means of the STM and other in situ teclmiques. 

Electrons from a scanning tunneling microscope (STM) in ultrahigh vacuum have been used to create surface-isolated silyl radicals on Si(lll), and their exposure to styrene leads to the formation of compact islands containing multiple... 

Chiang, S., Wilson, R. J., Gerber, Ch., and Hallmark, V. M. (1988). An ultrahigh vacuum scanning tunneling microscope with interchangeable sample and tips. J. Vac. Sci. Technol. A 6, 386-389. 

Poirier, G. E., and White, J. M. (1989). A new ultra-high vacuum scanning tunneling microscope design for surface science studies. Rev. Sec. Instrum. 60, 3113-3118. 

Wiesendanger, R., Giintherodt, H. J., Giintherodt, G., Gambino, R. J., and Ruf, R. (1990). Observation of vacuum tunneling of spin-polarized electrons with the scanning tunneling microscope. Phys. Rev. Lett. 65, 247—250. 

J. W. Lyding, T.-C. Shen, J. S. Hubacek, J. R. Tucker and G. C. Abeln, Nanoscale patterning and oxidation of H-passivated Si(100)-2 x 1 surfaces with an ultrahigh vacuum scanning tunneling microscope, Appl. Phys. Lett. 64, 2010 (1994). 

Before the invention of the scanning tunneling microscope (STM), planar metal/ vacuum/metal and metal/insulator/metal junctions were used in studies of electron... 

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