UV-Vis-NIR Spectral Range

Ellipsometry in the vacuum UV ( 190 nm) enables the analysis of materials for the next generation lithography (photoresist, AR coatings) at the latest exposure wavelengths (157 nm and 193 nm). The short wavelengths increase the sensitivity of ellipsometric measurements of ultra thin films ( 10 nm). New prospects are expected for the analysis of thin metallic and dielectric layers. 

In the UV most of the materials of interest, e.g. Si, polysilicon, SiGe, GaAs, and other semiconductor materials, are strongly absorbing this enables surface-sensitive measurements. Surface roughness, native oxide covering, material composition, and structural properties can be analyzed. 

Laterally inhomogeneous films and patterned structures of microelectronic and optoelectronic applications require small measuring spots. Today s measurements in 50 pm X 50 pm areas are standard for p-spot spectroscopic ellipsometers used in fa-blines. Areas more than ten times smaller can be analyzed by use of discrete-wave-length ellipsometers equipped with laser-light sources. 

---