Next generation lithography

Ellipsometry in the vacuum UV (< 190 nm) enables the analysis of materials for the next generation lithography (photoresist, AR coatings) at the latest exposure wavelengths (157 nm and 193 nm). The short wavelengths increase the sensitivity of ellipsometric measurements of ultra thin films (<10 nm). New prospects are expected for the analysis of thin metallic and dielectric layers. 

Electron beam resist has been a key material for mask fabrication in the semiconductor industry. EB and x-ray lithography have recently attracted much attention as not only a next-generation lithography in the semiconductor industry but also a nanofabrication tool... 

According to IC industry s roadmap, the next generation lithography will probably use exposure at 13.4 nm, in the extreme ultraviolet (EU V), for 22 nm feature size. Due to the huge absorbance of any material at this wavelength, the optics will consist of reflective mirrors, without any lenses involved. The big challenges at 13.4 nm are the new materials for photoresists and the low output of the EUV light sources. 

Levinson, Principles of Lithography, 2nd ed, p. 398, SPIE Press, Bellingham, WA (2005). H.C. Pfeiffer, PREVAIL IBM s e beam technology for next generation lithography, Proc. SPIE 3997, 206 213 (2000). 

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