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Under-etch effect

The surfaces of polypropylene mouldings may be etched effectively by exposure to trichlorethylene vapour under controlled conditions. The temperature of the solvent should be kept below its boiling point and the period of exposure to the vapour determined according to the thickness and other dimensions of the mouldings (it may be in the range from a half second to a few minutes). [Pg.235]

Initial processing experiments showed however, that under typical O2 RIE conditions (power 0.1 to 0.2 W/cm self-bias — —250 to —350 V, pressure — 5 to 20 mTorr O2), these resists are not very resistant, particularly under prolonged etching. Effective pattern transfer may require etch times of 15 to 30 min (11,12). which are sufficient to cause extensive degradation of the resist. Such behavior is reminiscent of poly (olefin sulfone)s such as the well-known PBS e-beam resist, which is etched 5-7 times faster than polystyrene in an oxygen plasma (5). [Pg.335]

In this approach, the bulk silicon substrate is not etched away, but only the sacrificial layer between the silicon substrate and the polysilicon microstructures is removed by lateral under-etching using the selective wet etchant of HE or BOE. Such etching solutions do not have any etching effect on the polysilicon film. Figure 6 illustrates the process steps to fabricate a polysilicon cantilever. [Pg.1842]

As with chemical etches, developing optimum conversion coatings requires assessment of the microstructure of the steel. Correlations have been found between the microstructure of the substrate material and the nature of the phosphate films formed. Aloru et al. demonstrated that the type of phosphate crystal formed varies with the orientation of the underlying steel crystal lattice [154]. Fig. 32 illustrates the different phosphate crystal morphologies that formed on two heat-treated surfaces. The fine flake structure formed on the tempered martensite surface promotes adhesion more effectively than the knobby protrusions formed on the cold-rolled steel. [Pg.991]

D) Preparation of 4-[1 -Methyl-Piperidyl-(4 )]-9,10-Dihydro-4H-Benzol4,5]Cyciohepta[1,2-b] Thiophen-(4)-ol 0.94 g of magnesium filings which have been activated with iodine are covered with a layer of absolute tetrahydrofuran and etched with a few drops of ethylene bromide. A solution of 5.0 g of 1-methyl-4-chloropiperidine in 5 ml of tetrahydrofuran is then added dropwise and boiling then effected for a further hour under reflux. After cooling to room temperature, the solution of 4.5 g of 9,lO-dihydro-4H-benzo[4,5] cyclohepta[1,2-b] thio-phen-(4)-one in 5 ml of tetrahydrofuran is added dropwise. [Pg.1264]


See other pages where Under-etch effect is mentioned: [Pg.12]    [Pg.12]    [Pg.537]    [Pg.406]    [Pg.305]    [Pg.146]    [Pg.127]    [Pg.968]    [Pg.423]    [Pg.407]    [Pg.52]    [Pg.67]    [Pg.71]    [Pg.191]    [Pg.570]    [Pg.126]    [Pg.438]    [Pg.86]    [Pg.167]    [Pg.130]    [Pg.430]    [Pg.271]    [Pg.991]    [Pg.729]    [Pg.1118]    [Pg.245]    [Pg.527]    [Pg.225]    [Pg.343]    [Pg.32]    [Pg.351]    [Pg.57]    [Pg.421]    [Pg.212]    [Pg.214]    [Pg.226]    [Pg.246]    [Pg.411]    [Pg.414]    [Pg.425]    [Pg.99]    [Pg.147]    [Pg.29]    [Pg.33]    [Pg.92]    [Pg.140]   
See also in sourсe #XX -- [ Pg.12 , Pg.46 , Pg.48 , Pg.394 ]




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Etching effect

Under-etching

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