Two-step growth

The decomposition of methyl silane (CH3S1H3) is used to produce an amorphous SiC at 800°C and a crystalline SiC at 900°C.P 1 A two-step growth procedure produces SiC films from hexamethyldisilane and 8% H2/Ar mixture at ambient pressure and low temperature. 

Industrially, the process is usually conducted in two steps, growth followed by displacement, but it can be carried out in a single step around 200 at 25.10 Pa pressure in the presence of much smaller amounts of triethytalummum (0.5 per cent weight). In this case, it is unnecessary to recover the alkylaluminum, and it can be hydrolysed with the formation of alumina. Ethyl Corporation in the United States uses the two-step process, while Oulf Oil in the United States and Mitsubishi Chemiad in Japan use the one-step process. 

This work should be compared with the results of Refs. [321-323]. In Ref. [321], = —lOOV was applied during the diamond CVD step, and as a result, the film surface consisted of azimuthally oriented (100) faces. Namely, application of suppressed the growth of non-(100)-oriented grains. For the two-step growth conditions, see Table H.4. Also, Refs. [324, 325] are related in this context. 

Ga-polar direction. However, by adjusting the growth parameters (two-step growth), the Ga-polarity to N-polarity wing ratio can be as low as 3 1 and the sample surface is flat, as desired for application of this material in devices. 

---