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Tunneling current density

The Simmons model expressed the tunneling current density through a barrier in the tunneling regime of V < Ob/c as52,82... [Pg.56]

FIGURE 3.13. Log plot of tunneling current densities multiplied by molecular length d at low bias and by d2 at high bias (symbols) versus molecular lengths. The lines through die data points are linear fittings. [Pg.59]

Fowler-Nordheim tunneling-current density, well known as the programming mechanism of a NAND-flash memory-cell, is represented by... [Pg.134]

A second injection process is the tunnel effect at the Fermi energy of the metal (Fig. 8.24). It is also termed the field effect. For a triangular barrier <1> , the tunnel current density has been calculated by Fowler and Nordheim [32] ... [Pg.252]

The tunnel current given by (1) measures the overlap of the electronic wave functions of the tip and the sample at the gap distance. The tip wave functions probe the sample wave functions as schematically shown in Fig. Ic. According to Bardeen [12] jt, the tunnel current density, takes the following form,... [Pg.21]

Fig. 12 Plots of the logarithm of the tunneling current density i versus the geometric monolayer thickness. Data recorded at —0.65 V/SCE on an unexpanded HMDE coated with n-alkanethiol monolayers of different chain length (A) and on a progressively expanded HMDE coated with a Ci2 monolayer (B). The inset refers to the data of curve B and shows a plot of / versus the tilt angle 0 of the C12 chains. The solid curve is a least-squares fit of Eq. (22) to the data [85],... Fig. 12 Plots of the logarithm of the tunneling current density i versus the geometric monolayer thickness. Data recorded at —0.65 V/SCE on an unexpanded HMDE coated with n-alkanethiol monolayers of different chain length (A) and on a progressively expanded HMDE coated with a Ci2 monolayer (B). The inset refers to the data of curve B and shows a plot of / versus the tilt angle 0 of the C12 chains. The solid curve is a least-squares fit of Eq. (22) to the data [85],...
In conventional STM operated in vacuum or air, a voltage (V) is applied between the substrate and tip electrodes as shown schematically in Fig. 1. The tunneling current density (ix) can be expressed by Eq. (1) when a low-bias voltage is applied [8j. [Pg.6553]

The tunneling current density is determined by the density of electrons per unit time incident on the junction and the transmission probability as a function of energy. Integrating over all electron energies one obtains " ... [Pg.32]

The FIT model predicts that the tunneling current density jn is dependent on the field within the barrier... [Pg.858]


See other pages where Tunneling current density is mentioned: [Pg.186]    [Pg.187]    [Pg.499]    [Pg.9]    [Pg.1612]    [Pg.58]    [Pg.366]    [Pg.239]    [Pg.96]    [Pg.145]    [Pg.346]    [Pg.347]    [Pg.348]    [Pg.277]    [Pg.115]    [Pg.140]    [Pg.124]    [Pg.6323]    [Pg.1054]    [Pg.215]    [Pg.294]    [Pg.1054]   
See also in sourсe #XX -- [ Pg.16 ]




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