Tuning the Contact Resistance

A closer analysis of an individual transfer curve is used to extraet information about the contaets for eaeh device. To describe the eleetrieal eharaeteris-tics in a proper way, the gradual ehannel approximation model (Eqs. (1) and (4)) is extended by an ohmie eontact resistances and in series at souree and drain. For a p-type ehannel we obtain  

The upper and lower equations stand for the linear and saturation regimes, respectively. Since in the linear regime the small eorreetion RJ to the large gate voltage term (V s f ) might be negleeted, only the total eontact resistance 

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Hoppe A, Seekamp J, Balster T, Gotz G, Buerle P, Wagner V (2007) Tuning the contact resistance in nanoscale oligothiophene field effect transistors. Appl Phys Lett 91 132115... 

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