Trap States and Fixed Interface Charges

Influence of Trap States and Fixed Interface Charges 

The observed threshold shift of AVj = 2.0 V results in a trap density t= 2.4 X lO traps/cm. This number is not so small eompared with the number of eharge carriers Wj, indicating that traps largely influence the device performance. One may speculate whether structural defects within the pentacene film contribute to trap states. An X-ray analysis of the defect densities in pentacene films revealed defect densities in the order of t=2xl0 defects/cm [44], in good agreement with the trap density inferred from the electronic characterisation. Thus, the observed structural defects apparently contribute to 

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