Time resolved photoluminescence TRPL

As mentioned above, in quantized semiconductors, it was predicted [73, 74], and experimentally verified by analyzing time-resolved photoluminescence (TRPL) spectra [2, 75-78], that the electron cooHng rate can be substantially reduced in quantum wells. For instance, in the case of MQWs, consisting of... 

In the limit where there is no nonradiative recombination, which means that 1/Tnonrad IS zero, the radiative efficiency becomes unity. The lifetime of excess minority carriers can be obtained by measuring the dynamic behaviors of optical emissions involved using time-resolved photoluminescence (TRPL). 

TA-transient absorption TRANIP = time-resolved anisotropy TRPL = time-resolved photoluminescence TRIR = time-resolved IR TR = EPR-time-resolved electron paramagnetic resonance spectroscopy. 

The influence of high-energy (2.4 MeV) proton irradiation on the photoluminescence (PL), PL excitation and time-resolved PL spectra of InGaAs/GaAs quantum dots (QDs) is reported. The effect of irradiation on the PLE spectra is mainly attributed to a Fermi level shift towards the center of the gap. TRPL measurements show an evidence of carrier tunneling out of the excited QD states to adjacent defects. The ground level remains unaffected by the defects, at least up to a certain dose. Our considerations show that the dots very probably expulse radiation defects. 

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