Thread dislocations mixed-type

Figure 8.2 Plan-view transmission electron micrograph of misfit dislocation network formed at the GaN/SiC interface. The network consists mostly of edge dislocations. A step on the SiC surface can interact with the network to form mixed-type dislocations. Some mixed-type threading dislocations, emerging from the interface, are visible through their characteristic image contrast, as indicated by arrows...

Figure 8.13 Plan-view transmission electron micrograph of GaN grown on a TiN interlayer [16]. Screw- or mixed-type threading dislocations (s) exhibit a characteristic black/white image contrast aligned with the scattering vector (g). Contrast from edge dislocations (e) is much weaker. Reproduced from [16] with permission from the American Institute of Physics...

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