Thin film imaging

Fig. 35. Process flow for thin-film imaging lithography (a) bilayer process and (b) top surface imaging. The bilayer process shown here employs a positive-tone imaging layer. The TSI process illustrated refles on preferential silicon incorporation in the exposed regions of the imaging layer to give a...

Fig. 36. Representative bilayer resist systems. Both CA and non-CA approaches are illustrated (116—119). (a) Cross-linking E-beam resist, 193-nm thin-film imaging resist (b) acid-cataly2ed negative-tone cross-linking system (c) positive-tone CA resist designed for 193-nm appHcations and (d) positive-tone...

The second productive idea useful in designing of modern photoresists is based upon thin film imaging (TFI). The thin uppermost layer of a photoresist... 

Photoresist technology is a novel technology of the 21st century. It finds more and more different applications in many fields of science and industry. The foremost of the technologies will be those using the thin film imaging idea. 

Furthermore, in addition to the bulk thermal properties of polymers and resists, determination of Tg of film interfaces and of ultrathin films has become an important issue in thin film imaging (bilayer, 157 nm, and EUV). Various techniques have been employed, which include ellipsometry [481,482], positron annihilation spectroscopy (PALS) [483], QCM [484], scanning viscoelasticity microscope (SVM) [485],x-ray reflectivity [486,487], and thermal probe [488]. 

Fig. 10.7 Three-dimensional AFM images (50x50 jim ) of PMMA/PS (50/50 w/w) blend thin films. Images on the left were...

Figure 3.42 Spiral growth multilayer crystals of poly(ethylene oxide) grown at 62°C from a thin molten film. Note that the growth spirals do not emanate from the center of the substrate crystal. Lamellar layer thickness is ca. 40 nm, so the height of the right-most spiral is about 500 nm. The optical micrograph was formed with interference contrast (no self-decoration) based on melt depletion in the thin film. Image width is 100 pm. From Kovacs and Gonthier [57] with kind permission from Springer Science-tBusiness Media B.V.

Fig. 12.17 Electron micrographs of WO3 thin films. Image (a) is the bright field view of the sample structure. The substrate, the WO3 thin film, and the epoxy regions are indicated in the micrograph. Image (b) is the HRTEM image of the WO3 thin film with lattice fringes corresponding to the monoclinic structure...

In the case of Langmuir monolayers, film thickness and index of refraction have not been given much attention. While several groups have measured A versus a, [143-145], calculations by Knoll and co-workers [146] call into question the ability of ellipsometry to unambiguously determine thickness and refractive index of a Langmuir monolayer. A small error in the chosen index of refraction produces a large error in thickness. A new microscopic imaging technique described in section IV-3E uses ellipsometric contrast but does not require absolute determination of thickness and refractive index. Ellipsometry is routinely used to successfully characterize thin films on solid supports as described in Sections X-7, XI-2, and XV-7. 

Figure Al.7.10. STM image (1000 A x 1000 A) of the (111) surface of a tungsten single crystal, after it had been coated with a very thin film of palladium and heated to about 800 K (courtesy of Ted Madey).

GNETICMATERIALS - THIN FILMS AND PARTICLES] (Vol 15) -imaging techniques [NONDESTRUCTIVE EVALUATION] (Vol 17) -useinNDE [NONDESTRUCTIVE EVALUATION] (Vol 17)... 

Fig. 4. Some electronic device applications using amorphous silicon (a) solar cell, (b) thin-fiLm transistor, (c) image sensor, and (d) nuclear particle detector.

Anthracene and sulfur were used as photoconductors to produce the first xerographic images in the late 1930s (1,4,6—9). These elements do not easily form good thin films nor absorb visible light strongly enough. 

Figure 6 High-resolution transmission electron microscopy image of an epitaxial thin film of Y Ba2Cu307 j, grown on LaAI03, shown in cross section. (Courtesy of T. E. MKchell, Los Alamos National Laboratory)...

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