Thin film electromigration

Electrical Properties. Generally, deposited thin films have an electrical resistivity that is higher than that of the bulk material. This is often the result of the lower density and high surface-to-volume ratio in the film. In semiconductor films, the electron mobiHty and lifetime can be affected by the point defect concentration, which also affects electromigration. These effects are eliminated by depositing the film at low rates, high temperatures, and under very controUed conditions, such as are found in molecular beam epitaxy and vapor-phase epitaxy. 

Electromigration in thin films and electronic devices Materials and reliability... 

A. Calo, P. Stoliar, M. Cavallini, S. Sergeyev, Y.H. Geerts, F. Biscarini, Monolayer control of discotic liquid crystal by electromigration of dewetted layers in thin film devices. J. Am. Chem. Soc. 130, 11953-11958 (2008)... 

A1 or Cu, depends on the structure of the conductor metal for example, Vaidya and Simha [97] reported that the measured MTF of Al-0.5% Cu thin films is a function of three microstructural variables (attributes) its median grain size s, the statistical variance of the grain size distribution, and the degree of the (111) fiber texture in the film. They showed that the dependence of electromigration resistance, Rem, on microstructure can be expressed as the product of the median grain size and normalized film texture, when divided by the variance of the grain size spread... 

Zhang, Y. W., Bower, A. F., Xia, L. and Shih, C. F. (1999), Three dimensional finite element analysis of the evolution of voids and thin films by strain and electromigration induced surface diffusion. Journal of the Mechanics and Physics of Solids 47, 173-199. 

Ohring, M. Sun, P.H. Void marker motion during electromigration in Sn In thin films. Thin Solid... 

Gilde, R. van Daal, H.J. Brongersma, H.H Electromigration and coagulation in thin films of pure indium and pure tin. Phys. Status Solidi A, Appl. Res. 1988,105, 493-499. 

Lloyd, J.R. Electromigration in thin film conductors. Semicond. Sci. Technol. 1997, 12, 1177-1185. Cottrell, A.H. An Introduction to Metallurgy E. Arnold London, 1968 402 pp. 

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