Thick Films During Thermal Processing

Prior to the final trench filling, a trench implantation (boron for P-type substrates) is performed. This is to ensure that the P-type substrate does not invert during subsequent processing and cause device-to-device leakages. The implant is directed vertically into the trench. Under these conditions the trench sidewall oxide acts as an efficient mask, while the implant in the bottom can reach into the substrate and form a P+ region. The remaining SiC film, which served as the RIE mask, also acts as an implant mask at the wafer surface. The implant energy and dose are adjusted for the thermal oxide thickness. 

Resinates. Precious metal resinates are organometaUic compounds in which the metal atom is attached to a sulfur or oxygen atom linked to a carbon atom. When these compounds are thermally decomposed, a film is deposited on the substrate. The thermal decomposition process takes place between 250 and 500°C. Under these conditions, noble metal compounds deposit metallic films while other precursor materials deposit metal oxide films. Ruthenium resinates can be used to formulate thick-film resistors. Ruthenium resinates decompose during firing and form an RuOj conductive phase. Thick and thin film ruthenium resinate-based resistors are extensively used in thermal printhead applications. ... 

Fig. 6.6 Film thicknesses of the three pol5fmer flattened layers and the PS interfacial sublayers against temperature determined by the in-situ XR measurements [52]. The XR data was collected during the cooling process and heating processes, and we confirmed that all the temperature dependences of the film thicknesses are independent of the thermal processes...

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