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Theory of SIMS

The signal intensity of an elemental positive or negative secondary ion is given [Pg.88]

Y is the sputter yield of the element, equal to the number of atoms ejected per incident ion  [Pg.88]

R1 is the probability that the particle leaves the surface as a positive or negative ion  [Pg.88]

T is the transmission of the mass spectrometer, typically 10-3 for a quadru-pole and 10-1 for a TOF instrument. [Pg.88]

The essential quantities that determine the yield of secondary ions in a SIMS spectrum are thus the sputter yield, Y, and the ionization probability, R . [Pg.88]


PTMC phenomenological theory of SIM stress-induced martensite... [Pg.11]


See other pages where Theory of SIMS is mentioned: [Pg.97]    [Pg.82]    [Pg.88]   


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