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The unitary level of surface ions

In covalent semiconductors of single element S such as silicon, the covalent bonding electron is in the valence band and the valence band hole participates in the ionization of surface atoms as shown in Eqn. 3-13 and in Fig. 3-7  [Pg.67]

The unitary level of the surface ion referred to the standard gaseous ion S sTD) at the outer potential of the semiconductor is represented by the unitary real potential, Ug. (= - 7s). This unitary real potential is equivalent to the sum of the standard free enthalpy AG of sublimation of the semiconductor, the ionization energy Is of the gaseous atom S, and the electron energy sy at the upper edge level of the valence band as shown in Eqn. 3-14  [Pg.68]


See other pages where The unitary level of surface ions is mentioned: [Pg.67]    [Pg.71]   


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