Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

The electron and hole concentrations in intrinsic semiconductors

The force exerted on an electron by an electric field, E, is given by  [Pg.555]

The mobility of the electrons, p, is defined as the drift velocity gained per unit electric field that is, [Pg.555]

Comparing this with Equation (S4.14) makes it apparent that  [Pg.555]

This is sometimes called the drift mobility, to distinguish it from mobility measured via the HaU effect. The conductivity and the mobility are then related by substituting t of Equation (S4.16) into Equation (S4.15) to give  [Pg.555]

If the length of the conductor is L, the electric field can be replaced by V/L, where V is the voltage applied to the conductor (see Section S4.6) to give  [Pg.555]


See other pages where The electron and hole concentrations in intrinsic semiconductors is mentioned: [Pg.555]    [Pg.555]   


SEARCH



Electron concentration

Electron hole

Electron holes, concentration

Electron intrinsic

Electronic holes

Electronic semiconductor

Electrons and Electron Holes

Electrons and Holes in Semiconductors

Electrons semiconductors

Hole concentration

Holes semiconductors

Holes, and electrons

Holes, in semiconductor

Semiconductors, electron-hole

© 2024 chempedia.info