The C and P Centres in Silicon

The positions of the pseudo-donor lines of the C- and P-line centres are given in Table 6.35. The Ag(D) lines of Table 6.34 are close to those of the C and P centres. 

In absorption, a value of 0.184meV (l.48cm 1) has been measured for the FWHM of the P line at LHeT in CZnatSi. In 30Si, the energies of the fundamental lines are found to increase by about 0.8 meV [97], 

The lines labelled as fundamental correspond to the creation of a BE in its ground state. All the absorption measurements are performed at LHeT a After [203], b [260], c After [261], d [97] PL 

In a far-IR absorption study of the USTDs (see Table 6.31), the existence of a centre with an ionization energy of 34.82 meV (USTD11) has been reported in a C-rich CZ silicon sample by Hara [92]. This value is close to the ionization energy of the ID associated with the P centre (34.77meV), containing C and O, but it is not known if the excitation conditions for the production of the far-IR ID spectrum were fulfilled in Hara s study. 

All the pseudo-donors do not have small ionization energies. In electron-irradiated n-type CZ silicon, the observation of an absorption line at 615.0 meV 

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