Tertiary Amine and Phosphine Adducts of Gallium Trihydride

TERTIARY AMINE AND PHOSPHINE ADDUCTS OF GALLIUM TRIHYDRIDE 

SUBMITTED BY GEORGE A. KOUTSANTONIS and COLIN L. RASTON CHECKED BY ALAN H. COWLEY1 and FRANCOIS P. GABBAI  

Donor adducts of aluminum and gallium trihydride were the subject of considerable interest in the late 1960s and early 1970s.1 Thin-film deposition and microelectronic device fabrication has been the driving force for the recent resurgence of synthetic and theoretical interest in these adducts of alane and gallane.24 This is directly attributable to their utility as low-temperature, relatively stable precursors for both conventional and laser-assisted CVD,59 and has resulted in the commercial availability of at least one adduct of alane. The absence of direct metal-carbon bonds in adducts of metal hydrides can minimize the formation of deleterious carbonaceous material during applications of CVD techniques, in contrast to some metal alkyl species.10, 11 

In this section we present the synthesis of adducts of some gallium trihydride (gallane) compounds which are remarkably thermally stable.2 12 13 

H3Ga(NMe3),17 are described in Volume 15 of Inorganic Syntheses. It is particularly important to use pure LiH in the preparation of Li[GaH4], l-Azabicyclo[2.2.2]octane (quinuclidine) was purchased from Fluka and used as received. 

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