Temperature effects spectral band widths

Band intensities spectral, 249 selection rules, 244 Band widths spectral, 246 temperature effects, 248 Barium, pentakis(diacetamide)-stereochemistry, 99 Bathocuproine absorptiometry, 550 Bathophenanthroline absorptiometry, 550... 

For nc-Si/SiO2 structures of type 1 the PL band maximum shifts from 1.3 to 1.7 eV when d decreases from 4.5 to 1.5 nm the intrinsic PL of nc-Si is commonly explained by the radiative recombination of excitons confined in nc-Si, while the size dependent spectral shift is attributed to the quantum confinement effect [21]. A considerable width of the PL band can be explained by nc-Si size distribution [21] as well as by phonon-assisted electron-hole recombination [22]. The external quantum yield of the exciton PL was found to reach -1 % for the samples with d = 3 - 4 nm at room temperature [18]. The lower quantum yield of the nc-Si/SiO2 structure in comparison with that observed for single Si quantum dots [22] and for III-V and II-VI compounds [22] can be explained by lower probability of the optical transitions, which are still indirect in nc-Si [21], as well as by the exciton energy migration in the assembly of closely packed nc-Si [18]. 

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