Temperature dependence of electrical resistivity

Figure 6.29 Temperature dependence of electrical resistivity of Ti203, VO2 and V2O3 through the metal-nonmetal transition.

For the ARS of MTCNQ, temperature dependence of electric resistance (Fig. 5) is best described in the frame of a model taking into account the scattering of conductivity electrons possibly caused by the narrowness of the small amplitude of the energy gap [20] ... 

Figure 1. Temperature dependence of electrical resistivity for different NCM samples (Roman numeral on the Figure corresponds to the number of sample in Table 1).

Abstract. It is shown that reinforcement of PTFE by 15% of multiwall carbon nanotubes (MWNT) results in more than 2 times increase of strength parameters compared to starting PTFE matrix. Non-trivial temperature dependences of electrical resistance and thermal electromotive force were observed. Percolation threshold determined from dependence of the composite specific resistance on MWNT concentration was near 6% mass. Concentration and nature of oxygen-containing MWNT surface groups influence the strength parameters of the composite material. 

Figure 8. Temperature dependence of electrical resistivity of VO2 ceramics, (a) VOi.99, (b) VOi 93.

The temperature dependence of electrical resistivity and Hall coefficient for IrSbs and lTo.88Coo.i2Sb3 are shown in Fig. 4 and 5, respectively. The resistive behaviors of the hot-pressed material is the same as that of the reacted material. However, the Hall coefficient Rh for the hot-pressed material is larger than the values for reacted material. Rhs are constant over the observed temperature range and carriers are in the degenerated state. 

Fig. 3 Temperature dependence of electrical resistance for one DIPS (j) -TCNQ single crystal ( ) first cooling, (+) return to room temperature. 

Fig. 34. Temperature dependence of electrical resistance, R(T), of SmCd and LaCd. The discontinuity in the R(T) curve of LaCd indicates the superconducting transition (Stewart et al., 1974).

Figure 11 shows the temperature dependence of electrical resistivity for Ati-coaled nylonl ion the metal side. The solid line in Figure 11 shows the resistivity of the sample which was prepared by coating of Au on the quenched nylonl 1, and the broken line shows that ol Ihe sample which was prepared by depositing Au on... 

The thermoelectromotive force (80-1050 K) has been measured by Levin (1981) and electrophysical properties of LaNi2Si2 (temperature dependence of electrical resistance, thermoelectrical coefficient, magnetic susceptibility as well as the preparation of stoichiometric thin films) were reported by Levin et al. (1977). 

Sak] [1988Sak] Measurement of the electrical resistivity optical microscopy after quenching from hquid state The temperature dependence of electrical resistivity of Fe-(2 to 90) Cu-0.5C (mass%) at 1350 to 1550°C... 

We show in Fig.l the typical temperature dependence of electrical resistivity for ZrSe2(3N-GL GH). The electrical resistivity almost depends on the relation of p = Po + AT. The n value is 2.0 for the L H-samples. We remark here that the magnitude of the resistivity for the H-sample is smaller than the one for the L-sample. A similar result was obtained also for the 2N-G-sample. This is ascribed to the difference of the carrier concentration, as shown in a later figure. This behavior of the resistivity was interpreted by Klipstein et al. on the basis of... 

Figure 3. Temperature dependence of electrical resistivity of ZrSe2(3N-PH GL). The solid lines are theoretical ones shown in the text.

Ike88 Ikeda, M., Komatsu, S.-Y, Sugimoto, T., and Kamei, K, Negative Temperature Dependence of Electrical Resistivity in Ti-Mo Binary Alloys, Proc. Sixth World Conf on Titanium, I (Cannes, Prance, 6-9 Jime 1988), Les Editions de Physique, 1988, p. 313-318... 

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