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Surface Skin-Resolved Quantum Entrapment

Likewise, decoding the XPS spectra of the bcc-structured (a) W(IOO) [49], (b) (110), and (c) (111) [50] surfaces, the hcp-structured Re, Ru, and Be surfaces derived quantitative information is summarized in Table 16.6. The apparent atomic CN in the bcc bulk is 8 instead of 12 for the fee standard. However, one can normalize the CN by z = 12 x CNbcc/8. The derived z values are the effective instead of the apparent value. XPS spectra from the well-faceted W skins were decomposed with respect to the reported best-fit results using the components of B, S2, and Si. The order of the B, S2, and Si components and the separation between them follow the same constraints, as mentioned above. [Pg.322]

Results indicate that the bonds in the outermost layer are shortest and strongest in comparison to those in the subsequent sublayers, which agrees with what discovered by Matsui et al. [60] from Ni surface. They found that the Ni 2p levels of the outermost three atomic layers shift positively to lower BE distinctly, with the outermost atomic layer shifting the most [Pg.322]


Fig. 16.9 Skin-, size-, and edge-resolved electronic binding-energy shifts of Si. The 2p spectra for a Si(lOO) [63] and b Si(lll) [64] surfaces with the bulk B, S2, and 5i components size dependence of the c 2p and d the valence band of Si clusters [65], and e edge-induced quantum entrapment of the valance DOS of Si(210) surface with respect to the Si(lOO) surface (Reprinted... Fig. 16.9 Skin-, size-, and edge-resolved electronic binding-energy shifts of Si. The 2p spectra for a Si(lOO) [63] and b Si(lll) [64] surfaces with the bulk B, S2, and 5i components size dependence of the c 2p and d the valence band of Si clusters [65], and e edge-induced quantum entrapment of the valance DOS of Si(210) surface with respect to the Si(lOO) surface (Reprinted...

See other pages where Surface Skin-Resolved Quantum Entrapment is mentioned: [Pg.322]    [Pg.322]    [Pg.427]   


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