Superlattices modulation doping

In order to solve the problems of the low solubility of magnetic ions in III-V semiconductors and the difficulty of the carrier control in II-VI semiconductors, modulation-doped III-V/II-VI superlattice structures have been proposed (Kamatani and Akai 2001a). Here, a... 

As mentioned in the preceding section the mobility of degenerately-doped zinc oxide (as well as of other TCO materials and semiconductors) is limited by ionized impurity scattering in homogeneously-doped materials. Since about 30 years it is well known that the mobility can be increased by the so-called modulation doping method, introduced by Dingle et al. [179] for GaAs/C.ai, Af As superlattice structures (for a review see [180]). 

MBE MD-SLS MESFET molecular beam epitaxy modulation doped strained-layer superlattice metal-semiconductor field effect transistor... 

Dingle, R. Stormer, H.L. Gossard, A.C. Wiegmann, W. Electron mobilities in modulation-doped semiconductor heterojunction superlattices. Appl. Phys. Lett. 1978, 33, 665. 

Fig. 9.31. Dlustration of the potential modulation of the bands of a doping superlattice. The dashed line illustrates the screening of the potential by photoexcited charge carriers. Recombination of electrons and holes is by tunneling between layers.

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