Substrate horizontal

The other method of monolayer transfer from the air/water interface onto solid substrates is illustrated in Figure 2. This method is called the Langmuir-Schaefer technique, or horizontal lift. It was developed in 1938 by I. Langmuir and V. Schaefer for deposition of protein layers. Prepared substrate horizontally touches the monolayer, and the layer transfers itself onto the substrate surface. The method is often used for the deposition of rigid monolayers and for protein monolayers, hi both cases the apphcation of the Lang-muir-Blodgett method produces defective films. 

Figure C2.4.5. Horizontal transfer on a hydrophobic substrate. This metliod is useful for very rigid films tliat are in tire solid state in the ji-A-diagram.

Fig. 4.14. Fluorescence intensity from layers buried in a thick substrate. The dependence of intensity on the glancing angle was calculated for layers of different thickness but with a constant analyte area density. Silicon was assumed as substrate and Mo-Ka X-rays as primary beam. Total reflection occurs in the region below 0.1°. Without total reflection, the dashed horizontal line would be valid throughout [4.21].

We find that the tubes are placed almost horizontally on the substrate. Irregular nanostructures were also formed, as displayed in the images. However, the high occurrence of tubes clearly shows that carbon prefers to condense to tubular structures, as opposed to other nanostructures, under our preparation conditions. 

FIG. 16 Negative normal stress T.. as a funetion of substrate separation from grand eanonial ensemble Monte Carlo simulations at T = 1.00, ii = —11.0, and = 0.0 ( )(Pbuik = 0.486) the solid line represents a eubie spline fit to the dis-erete data to guide the eye. Also shown are three isobars —T% = 0.000, 0.598, and 1.196, indieated by horizontal lines. Interseetions between the isobars and the eurve Tzzi z) correspond to stable and metastable phases of the eonfined fluid (see text) (from Ref. 66). 

Fig. 15—Sketch of preparation of L-B films (a) spread amphiphilic molecules on water surface, (b) compress the molecules using the barrier to get close packed and ordered molecular film, (c) transfer the film onto a substrate through the vertical immerse/retreat process, (d) transfer the film by horizontal lifting.

The second way of preparing L-B monolayer structures, the horizontal lifting method, was introduced by Langmuir and Schaefer. In this method, a compressed monolayer first is formed at the water-air interface, and a flat substrate is then placed horizontally on the monolayer film. When the substrate is lifted and separated from the water surface, the monolayer is transferred onto the substrate, as depicted in Fig. 15(d). 

Figure 1 Illustrates two general MOCVD reactor configurations, the horizontal reactor and the axlsymmetrlc vertical reactor. The reactant gas (ASH3, Ga(CH3)3 and Al( 013)3) enters cold and heats up as It fiows toward the substrate where a solid film of AlGaAs Is being deposited. The chemical transformations Involved In the deposition process may occur both In the gas phase and on the surface of the growing film.

The films were deposited onto solid substrates by a horizontal lift technique. One layer was deposited for the gravimetric and fluorescence measnrements. Twenty layers were deposited for x-ray stndy. 

To investigate the influence of swelhng of the substrate by the contacting liquid, the contact angle 6 of sessile drops of tricresylphosphate, TCP (drop volume 2 p,L, viscosity t = 70 cP, surface tension = 40.9 mN m ), has been measured as a function of time after deposition, t, on flat, smooth, horizontal surfaces of soft and rigid solids at 20°C. The method of measurement of contact angle is the same as in Section Ill.A. 

Figure 8-11. Representations of three classes of Bi-Bi reaction mechanisms. Horizontal lines represent the enzyme. Arrows indicate the addition of substrates and departure of products. Top An ordered Bi-Bi reaction, characteristic of many NAD(P)H-dependent oxidore-ductases. Center A random Bi-Bi reaction, characteristic of many kinases and some dehydrogenases. Bottom A ping-pong reaction, characteristic of aminotransferases and serine proteases.

Figure 12.4 AFM images of thin PS-fo-P4VP (162 400 87 400) films (3-pentanone solvent) with phase separation structures of P4VP cylinders in PS matrices on glass substrates, and height profiles of horizontal lines in these images, (a), (d) Before and (b), (e) after immersion in methanol (c), (f) after being doped with TCPP (d)-(f) are the height profiles ofthe horizontal lines shown in the AFM images...

Fig. 39.17. Schematic illustration of Michaelis-Menten kinetics in the absence of an inhibitor (solid line) and in the presence of a competitive inhibitor (dashed line), (a) Plot of initial rate (or velocity) V against amount (or concentration) of substrate X. Note that the two curves tend to the same horizontal asymptote for large values of X. (b) Lineweaver-Burk linearized plot of 1/V against l/X. Note that the two lines intersect at a common intercept on the vertical axis.

The appropriate gas mixture can be supplied to the center of the reactor (4 in Fig. 6) via holes in the lower electrode (2 in Fig. 6). and is pumped out through the space between substrate electrode and the reactor wall to the exhaust (5 in Fig. 6). Alternatively, the gas mixture can be supplied horizontally, parallel to the electrodes, through a flange in the reactor wall, positioned between the electrodes (perpendicular to the plane of the cross section in Fig. 6, not shown). In this case, the gas is pumped out at the opposite side of the supply. 

Application of controlled amounts of foam to the substrate is by knife-on-roller, knife-on-blanket, floating knife, horizontal pad or furnishing roller with doctor blade, or by squeegee across a printing screen. 

Fig. 22.3 Cytochrome P450 monooxygenases and nicotine metabolism. An alignment of the amino acid sequences of the enzymes 2A6 and 2D6. Occurrences of the same amino acid residue at the same position are shown in black. Putative substrate recognition sites (SRS1 — SRS6) are shown by horizontal lines. Vertical...

N3)2Ga N(CH2CH2NEt2)2 ] low volatility Horizontal hot-wall LP-CVD Growth temperature 750-950 °C, preferred orientation of crystallites perpendicular to c-plane of sapphire substrate, no additional N source 287... 

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