Sublimation growth temperature range

For even better volatility the fluorinated aryl substituent C6H2(CF3)3 has been employed, as in the cadmium thiolate [Cd S(C6H2(CF3)3) 2] which sublimes at 160 °C under vacuum. When used in deposition the hexagonal phase of CdS was predominant with growth temperatures in the range 425 175 °C, with no fluorine incorporation in the CdS films being observed.232... 

Sublimation is one of the main methods of growing silicon carbide. This method is employed for growth of the material for abrasive applications as well as for the growth of single crystals and epitaxial layers for use in semiconductor electronics. The idea of the method is fairly simple, and is based on material transport from a hot source of material to a substrate which rests at a somewhat lower temperature. The transport is performed by the intrinsic vapour of the material at a high temperature, usually in the range 1600-2700 °C. 

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