Stress-Induced Inhomogeneous Broadening

A distribution of stresses in a crystal sample produces random splitting of the electronic levels and the net result is, to the first order, an inhomogeneous broadening of the electronic lines. 

The values of Ei of Kazanskii et al. s paper are measured at half height of the photoresponse signal. 

Distribution of stresses is found in the immediate vicinity of dislocations in semiconductors and it is the origin of the so-called dislocation broadening. This effect was recognized and discussed in conjunction with the conditions for the observation of ESR spectra in silicon [17,84]. An example of this effect on an absorption line is shown in Fig. 8.26, displaying the profiles at LHeT of the G(Al) line in germanium samples cut in two different regions of a Ge AZ ingot. 

The profile of the line in the more dislocated sample is observed to be broadened. There are also additional splitting of the line ( 0.054 and 0.093cm ) (TT).7 and 12peV). This doublet splitting can be due to the effect of inhomogeneous stress induced by dislocations [142]. 

---