Strained-Layer Superlattice SLS

Another concept for increasing device speed is the strained layer superlattice (SLS), which consists of alternating layers of semiconductor materials with thickness 10 nm deposited by C VD. These materials have the same crystal structure but different lattice 

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Schematic of a strained-layer superlattice (SLS) showing the tetragonal distortion from the original cubic layers.

MBE MD-SLS MESFET molecular beam epitaxy modulation doped strained-layer superlattice metal-semiconductor field effect transistor... 

Periodic structures containing alternating layers of different ferroelectric and non-ferroelectric materials - superlattices (SLs) - have received increased attention. High-quality ferroelectric SLs with nearly atomically sharp interfaces in various perovskite systems have been synthesized and investigated [14, 24—27, 49-56], and also studied theoretically [44, 57-64]. Properties of such structures are not just a simple combination of the properties known for constituent bulk materials, as they are affected by both mechanical (lattice-mismatch-induced strain) and electrostatic boundary conditions at multiple interfaces located within close proximity to each other. Strain engineering is one of the most appealing ways to... 

X-ray diffraction patterns of an SLS allow for the determination of the layer thickness, composition and strain in the layers (14-16). A typical x-ray diffraction pattern for a superlattice grown directly on a GaP substrate is shown in Figure 4. The layer thickness is related to the observed d-spacings by the following,... 

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