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State density integration

We now have to ealculate G co) only on the imaginary frequency axis. It is no longer neeessary to solve the seeular system (3.28) explicitly. G co) is a smoothly varying and rapidly converging function without zeros or poles on the imaginary frequency axis. [Pg.37]

By using Eq. (2.7) and joining all oscillators attached to the same molecule and space direction we obtain from Eq. (3.47) [Pg.38]

Expanding (3.49) with respect to the off-diagonal elements, we again obtain Eqs. (3.23) and (3.41). [Pg.38]

The application of the analytical identity (3.44) to the van der Waals binding energy in crystals at zero temperature was first reported by Mahan in 1965 [34]. Van Kampen et al. used the same theorem in investigations on the van der Waals energy between half-spaces [35]. The extension to include finite temperatures is due to Ninham et al. [36]. [Pg.38]


The preceding considerations are based on the fluctuation approach and the understanding that damping arises from a random coupling to an infinite number of further particles. The energy flows randomly to these particles, but occasionally returns. Let us now turn to the oscillator model, which in connection with the state density integration enables the powerful formalism presented in Section 3.4 to be used. [Pg.45]

To obtain the lattice energy we use the state density integration described in Section 3.4. Turning to an infinite cavity radius Vg according to Eq. (6.1), we find... [Pg.98]

In this form, which is analogous to Eq. (26) in the photon absorption case, the rate is expressed as a sum over the neutral molecule s vibration-rotation states to which the specific initial state having energy , can decay of (a) a translational state density p multiplied by (b) the average value of an integral operator A whose coordinate representation is... [Pg.308]

Figure4.ll Bottom optimized ions HSE03 total density of states and integrated number of defect states (An) for Ovac. The integrated charge density corresponding to the defect states is shown in the top panel from two different perspectives for the same isocontour value (green 10 6eA 3). O red, Ti cyan (unpublished work). Figure4.ll Bottom optimized ions HSE03 total density of states and integrated number of defect states (An) for Ovac. The integrated charge density corresponding to the defect states is shown in the top panel from two different perspectives for the same isocontour value (green 10 6eA 3). O red, Ti cyan (unpublished work).
Of course, as q increases, the dispersion law ru q) deviates from linear, so that the integral over q in Eq. (A1.65) should be limited from above. It is reasonable to so limit the admissible frequencies a> that the state density normalization (A 1.27) is preserved ... [Pg.141]

There are other noteworthy single excited-state theories. Gorling developed a stationary principle for excited states in density functional theory [41]. A formalism based on the integral and differential virial theorems of quantum mechanics was proposed by Sahni and coworkers for excited state densities [42], The local scaling approach of Ludena and Kryachko has also been generalized to excited states [43]. [Pg.122]

Electrons thermally excited from the valence band (VB) occupy successively the levels in the conduction band (CB) in accordance with the Fermi distribution function. Since the concentration of thermally excited electrons (10 to 10 cm" ) is much smaller than the state density of electrons (10 cm ) in the conduction band, the Fermi function may be approximated by the Boltzmann distribution function. The concentration of electrons in the conduction band is, then, given by the following integral [Blakemore, 1985 Sato, 1993] ... [Pg.27]

The concentration of electrons that occupy a part of the total concentration, N, of the energy states available for electrons is obtained by integrating the product of the state density. Die), and the Fermi function, fie), as shown in Eqn. 2-30 ... [Pg.33]

FRAM engineering, particularly for high-density integration, is very well reviewed in [1,2]. The state of the art is illustrated in Fig. 1 from Samsung. [Pg.199]

The state densities are not uniform across the energy band, and their population density, N(E), is the greatest in the center of the band. The number of electrons in the band, Ug, can then be evaluated and used in Eq. (6.9) by integrating the product of the density of state N(E) and the probability of their occupation, /( ), over the band energy range (see Figure 6.3c). Thus, for metals. [Pg.543]

Since die potentials u are one-electron operators, the integral in the last line of Eq. (8.9) can be written in terms of the ground-state density... [Pg.253]

If the chosen vibrational state of the complex is assigned any arbitrary energy width, the discussion may easily be extended by integration over the spectral profile. The same expression for ft(E) is obtained because of cancellation of C + — Ey in the state densities and velocities. If the reaction path is degenerate, e.g. two for dissociation of an H atom from CH20, eqn. (8) has to be scaled accordingly. [Pg.344]


See other pages where State density integration is mentioned: [Pg.138]    [Pg.36]    [Pg.37]    [Pg.103]    [Pg.105]    [Pg.132]    [Pg.135]    [Pg.138]    [Pg.36]    [Pg.37]    [Pg.103]    [Pg.105]    [Pg.132]    [Pg.135]    [Pg.94]    [Pg.65]    [Pg.110]    [Pg.113]    [Pg.79]    [Pg.475]    [Pg.10]    [Pg.10]    [Pg.28]    [Pg.263]    [Pg.221]    [Pg.250]    [Pg.110]    [Pg.142]    [Pg.194]    [Pg.467]    [Pg.252]    [Pg.253]    [Pg.297]    [Pg.194]    [Pg.48]    [Pg.94]    [Pg.11]    [Pg.25]    [Pg.197]    [Pg.259]    [Pg.128]    [Pg.47]    [Pg.287]    [Pg.141]   
See also in sourсe #XX -- [ Pg.138 ]




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State density

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