Staebler-Wronski effects annealing temperature

Staebler and Wronski (1977) were the first to observe light-induced changes in the properties of a-Si H. The Staebler-Wronski effect is now known to affect the performance of a-Si H solar cells through the creation of recombination centers and charged traps (Carlson et al., 1983b). These light-induced centers are metastable and can be annealed out at temperatures of 150 - 200,C. 

Staebler and Wronski, 1977). In order to avoid irreversible annealing effects the measurements are performed going from higher to lower temperatures. For each data point of the thermoelectric power S, about 10 values of the thermovoltage A Fas a function of AT = r, — F2 are taken at a given mean temperature 7= (T, + 7 2)/2, and is determined from the slope of... 

In the original studies of the S-W effect on undoped and doped a-Si H films, the principal characteristics of the S-W effect and the presence of metastable defects in a-Si H were established (Staebler and Wronski, 1977 Wronski, 1978 Staebler and Wronski, 1980). It was found that the large light-induced conductivity changes are a bulk phenomenon that occurs between what may be considered a thermally stable state A and a new metastable conductivity state B. State A is perfectly reproducible and is independent of previous exposures to light. It is obtained after the a-Si H film is annealed (in the dark) at temperatures above 150 C and then cooled to room temperature. The annealing time required for state A depends on the... 

---