Stacking faults and antiphase boundaries

Antiphase boundaries occur in ordered structures when two adjacent regions are related by a translation vector of the subcell. Here we use this term to describe boundaries intercepting the a- or fi-axis characterized by a shift of the 

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Despite continuing progress in the crystal growth, 3C-SiC films still contain many lattice defects. In particular, twins, stacking faults and antiphase boundaries (APBs) have been reported [64,65]. APBs occur as a common defect when a polar film, SiC in this case, is heteroepitaxially grown on a non-planar substrate. To eliminate this particular defect in 3C-SiC films, Si substrates misoriented from the (100) plane have been used, as stated above [39,53],... 

Twins and some stacking faults produce bond distortions but no broken bonds and are usually of limited consequence. Stacking faults producing antiphase boundaries in ordered materials are high energy structures and result in significant numbers of charged defects. 

Using the constructed potentials the y-surface for the (111) plane was calculated. (For more details see Girshick and Vitek 1995). T e lowest energy minimum on this surface corresponds to the ideal Llo structure. However, there are three different metastable stacking fault type defects on (111) the antiphase boundary (APB), the complex stacking fault (CSF) and the superlattice intrinsic stacking fault (SISF). The displacements... 

A second type of boundary, in which there is no misorientation between grains, is the antiphase boundary. This occurs when wrong atoms are next to each other on the boundary plane. For example, with hexagonal close-packed (HCP) crystals, the sequence. .. ABABAB... can be reversed at the boundary to ABABA ABABA, where represents the boundary plane. Antiphase boundaries and stacking faults are typically of very low energy, comparable to that of a coherent twin boundary. 

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