Sputtering in SIMS

A characteristic of sputtering in SIMS is the formation of molecular ions. Several atoms can leave the surface almost simultaneously and can leave the surface as a bound diatomic cluster. The secondary ions can combine with residual vacuum species such as C, H, and O, with the primary beam ions, and with other ions from the sample. If clusters or molecular ions are detected, it does not mean that they were nearest neighbors in the analyzed surface [5]. 

Kinetic sputtering is initially considered because this is conceptually the simplest form of sputtering and the best understood of the sputtering processes. This is also the most common form of sputtering in SIMS as used in elemental analysis. Discussion of the other sputtering processes will follow. 

---