Spontaneous galvanic displacement reactions

E-Beam Lithography And Spontaneous Galvanic Displacement Reactions For Spatially Controlled... 

An alternative and very promising approach to realize substrates suitable for MEF applications is based on spontaneous galvanic displacement reactions (SGDR). Similarly to other deposition techniques previously described, SGDR permits the fabrication of extended metallic substrates additionally, it allows to control and optimize the surface roughness of the metal film in order to obtain efficient MEF processes, while maintaining an appreciable uniformity of the morphology over the entire sample. 

The majority of reactors utilise electrolytic cells i.e. the cell reaction is driven by an external power supply general cases have been considered in figure 3 and specific examples will be illustrated in section 5. In certain cases, the electrode materials and conditions may result in a spontaneous reaction i.e. the use of a galvanic cell, particularly in the case of the displacement (cementation) of metals, for example, cupric ions may be removed as a copper deposit on a soluble iron powder in acid solution ... 

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