Space charge layer formation interface

Fig. 4.12 Diagram illustrating space charge layer formation in microcrystalline and nanocrystalline particles in equilibrium in a semiconductor-electrolyte interface. The nanoparticles are almost completely depleted of charge carriers with negligibly small band bending.

Scheme 8. Space-charge layer formation at a semiconductor-electrolyte interface...

Fig. 9.3. Band bending and space charge layer formation at an n-type semiconductor-electrolyte interface (a) accumulation layer,...

Although the observations for PPV photodiodes of different groups are quite similar, there are still discussions on the nature of the polymer-metal contacts and especially on the formation of space charge layers on the Al interface. According to Nguyen et al. [70, 711 band bending in melal/PPV interfaces is either caused by surface states or by chemical reactions between the polymer and the metal and... 

When a semiconductor electrode is in contact with an electrolyte solution, thermodynamic equilibration takes place at the interface. This may result in the formation of a space charge layer within a thin surface region of the semiconductor, in which the electronic energy bands are generally bent upwards or downwards, respectively, in the cases of n- and p-type semiconductors. Fig. 2.3... 

The Mott-Schottky regime spans about 1 V in applied bias potential for most semiconductor-electrolyte interfaces (i.e., in the region of depletion layer formation of the semiconductor space-charge layer, see above) [15]. The simple case considered here involves no mediator trap states or surface states at the interface such that the equivalent circuit of the interface essentially collapses to its most rudimentary form of Csc in series with the bulk resistance of the semiconductor. Further, in all the discussions above, it is reiterated that the redox electrolyte is sufficiently concentrated that the potential drop across the Gouy layer can be neglected. Specific adsorption and other processes at the semiconductor-electrolyte interface will influence Ffb these are discussed elsewhere [29, 30], as are anomalies related to the measurement process itself [31]. Figure 7 contains representative Mott-Schottky... 

The model was considered to also be applicable for the PS formed on other types of silicon substrates. As a generalization, Zhang stated that it is the sensitivity of the semiconductor interface reactions to the curvature of the interface that enhances the preferential dissolution and leads to the formation of pores. For p-Si and heavily doped -Si which have much thinner space charge layers than does -Si, the radius of curvature must be small to affect the width of the space charge layer and, as a result, much... 

The contribution of electric field to lithium transport has been considered by a few authors. Pyun et argued on the basis of the Armand s model for the intercalation electrode that lithium deintercalation from the LiCo02 composite electrode was retarded by the electric field due to the formation of an electron-depleted space charge layer beneath the electrode/electrolyte interface. Nichina et al. estimated the chemical diffusivity of lithium in the LiCo02 film electrode from the current-time relation derived from the Nernst-Planck equation for combined lithium migration and diffusion within the electrode. 

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